234 lines
5.9 KiB
C
234 lines
5.9 KiB
C
/*
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* Copyright (c) 2017 Linaro Limited
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* Copyright (c) 2017 BayLibre, SAS
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* Copyright (c) 2019 Centaur Analytics, Inc
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*
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* SPDX-License-Identifier: Apache-2.0
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*/
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#define LOG_DOMAIN flash_stm32l4
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#define LOG_LEVEL CONFIG_FLASH_LOG_LEVEL
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#include <logging/log.h>
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LOG_MODULE_REGISTER(LOG_DOMAIN);
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#include <kernel.h>
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#include <device.h>
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#include <string.h>
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#include <drivers/flash.h>
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#include <init.h>
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#include <soc.h>
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#include "flash_stm32.h"
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#if !defined (STM32L4R5xx) && !defined (STM32L4R7xx) && !defined (STM32L4R9xx) && !defined (STM32L4S5xx) && !defined (STM32L4S7xx) && !defined (STM32L4S9xx)
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#define STM32L4X_PAGE_SHIFT 11
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#else
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#define STM32L4X_PAGE_SHIFT 12
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#endif
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/* offset and len must be aligned on 8 for write
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* , positive and not beyond end of flash */
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bool flash_stm32_valid_range(struct device *dev, off_t offset, u32_t len,
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bool write)
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{
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return (!write || (offset % 8 == 0 && len % 8 == 0U)) &&
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flash_stm32_range_exists(dev, offset, len);
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}
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/*
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* STM32L4xx devices can have up to 512 2K pages on two 256x2K pages banks
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*
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* STM32L4R/Sxx devices can have up to 512 4K pages on two 256x4K pages banks
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*/
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static unsigned int get_page(off_t offset)
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{
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return offset >> STM32L4X_PAGE_SHIFT;
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}
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static int write_dword(struct device *dev, off_t offset, u64_t val)
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{
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volatile u32_t *flash = (u32_t *)(offset + CONFIG_FLASH_BASE_ADDRESS);
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struct stm32l4x_flash *regs = FLASH_STM32_REGS(dev);
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#if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK)
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bool dcache_enabled = false;
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#endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */
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u32_t tmp;
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int rc;
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/* if the control register is locked, do not fail silently */
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if (regs->cr & FLASH_CR_LOCK) {
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return -EIO;
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}
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/* Check that no Flash main memory operation is ongoing */
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rc = flash_stm32_wait_flash_idle(dev);
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if (rc < 0) {
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return rc;
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}
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/* Check if this double word is erased */
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if (flash[0] != 0xFFFFFFFFUL ||
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flash[1] != 0xFFFFFFFFUL) {
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return -EIO;
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}
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#if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK)
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/*
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* Disable the data cache to avoid the silicon errata 2.2.3:
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* "Data cache might be corrupted during Flash memory read-while-write operation"
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*/
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if (regs->acr.val & FLASH_ACR_DCEN) {
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dcache_enabled = true;
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regs->acr.val &= (~FLASH_ACR_DCEN);
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}
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#endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */
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/* Set the PG bit */
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regs->cr |= FLASH_CR_PG;
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/* Flush the register write */
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tmp = regs->cr;
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/* Perform the data write operation at the desired memory address */
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flash[0] = (u32_t)val;
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flash[1] = (u32_t)(val >> 32);
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/* Wait until the BSY bit is cleared */
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rc = flash_stm32_wait_flash_idle(dev);
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/* Clear the PG bit */
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regs->cr &= (~FLASH_CR_PG);
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#if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK)
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/* Reset/enable the data cache if previously enabled */
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if (dcache_enabled) {
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regs->acr.val |= FLASH_ACR_DCRST;
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regs->acr.val &= (~FLASH_ACR_DCRST);
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regs->acr.val |= FLASH_ACR_DCEN;
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}
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#endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */
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return rc;
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}
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static int erase_page(struct device *dev, unsigned int page)
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{
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struct stm32l4x_flash *regs = FLASH_STM32_REGS(dev);
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u32_t tmp;
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u16_t pages_per_bank;
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int rc;
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#if !defined(FLASH_OPTR_DUALBANK) && !defined(FLASH_OPTR_DBANK)
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/* Single bank device. Each page is of 2KB size */
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pages_per_bank = DT_FLASH_SIZE >> 1;
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#elif defined(FLASH_OPTR_DUALBANK)
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/* L4 series (2K page size) with configurable Dual Bank (default y) */
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/* Dual Bank is only option for 1M devices */
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if ((regs->optr & FLASH_OPTR_DUALBANK) || (DT_FLASH_SIZE == 1024)) {
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/* Dual Bank configuration (nbr pages = flash size / 2 / 2K) */
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pages_per_bank = DT_FLASH_SIZE >> 2;
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} else {
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/* Single bank configuration. This has not been validated. */
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/* Not supported for now. */
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return -ENOTSUP;
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}
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#elif defined(FLASH_OPTR_DBANK)
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/* L4+ series (4K page size) with configurable Dual Bank (default y)*/
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if (regs->optr & FLASH_OPTR_DBANK) {
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/* Dual Bank configuration (nbre pags = flash size / 2 / 4K) */
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pages_per_bank = DT_FLASH_SIZE >> 3;
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} else {
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/* Single bank configuration */
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/* Requires 128 bytes data read. This config is not supported */
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return -ENOTSUP;
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}
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#endif
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/* if the control register is locked, do not fail silently */
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if (regs->cr & FLASH_CR_LOCK) {
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return -EIO;
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}
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/* Check that no Flash memory operation is ongoing */
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rc = flash_stm32_wait_flash_idle(dev);
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if (rc < 0) {
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return rc;
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}
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/* Set the PER bit and select the page you wish to erase */
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regs->cr |= FLASH_CR_PER;
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#ifdef FLASH_CR_BKER
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regs->cr &= ~FLASH_CR_BKER_Msk;
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/* Select bank, only for DUALBANK devices */
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if (page >= pages_per_bank)
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regs->cr |= FLASH_CR_BKER;
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#endif
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regs->cr &= ~FLASH_CR_PNB_Msk;
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regs->cr |= ((page % pages_per_bank) << 3);
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/* Set the STRT bit */
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regs->cr |= FLASH_CR_STRT;
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/* flush the register write */
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tmp = regs->cr;
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/* Wait for the BSY bit */
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rc = flash_stm32_wait_flash_idle(dev);
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regs->cr &= ~FLASH_CR_PER;
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return rc;
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}
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int flash_stm32_block_erase_loop(struct device *dev, unsigned int offset,
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unsigned int len)
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{
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int i, rc = 0;
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i = get_page(offset);
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for (; i <= get_page(offset + len - 1) ; ++i) {
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rc = erase_page(dev, i);
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if (rc < 0) {
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break;
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}
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}
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return rc;
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}
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int flash_stm32_write_range(struct device *dev, unsigned int offset,
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const void *data, unsigned int len)
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{
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int i, rc = 0;
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for (i = 0; i < len; i += 8, offset += 8U) {
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rc = write_dword(dev, offset,
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UNALIGNED_GET((const u64_t *) data + (i >> 3)));
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if (rc < 0) {
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return rc;
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}
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}
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return rc;
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}
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void flash_stm32_page_layout(struct device *dev,
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const struct flash_pages_layout **layout,
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size_t *layout_size)
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{
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static struct flash_pages_layout stm32l4_flash_layout = {
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.pages_count = 0,
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.pages_size = 0,
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};
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ARG_UNUSED(dev);
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if (stm32l4_flash_layout.pages_count == 0) {
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stm32l4_flash_layout.pages_count = FLASH_SIZE / FLASH_PAGE_SIZE;
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stm32l4_flash_layout.pages_size = FLASH_PAGE_SIZE;
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}
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*layout = &stm32l4_flash_layout;
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*layout_size = 1;
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}
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