/* * Copyright (c) 2017 Linaro Limited * Copyright (c) 2017 BayLibre, SAS * Copyright (c) 2019 Centaur Analytics, Inc * * SPDX-License-Identifier: Apache-2.0 */ #define LOG_DOMAIN flash_stm32l4 #define LOG_LEVEL CONFIG_FLASH_LOG_LEVEL #include LOG_MODULE_REGISTER(LOG_DOMAIN); #include #include #include #include #include #include #include "flash_stm32.h" #if !defined (STM32L4R5xx) && !defined (STM32L4R7xx) && !defined (STM32L4R9xx) && !defined (STM32L4S5xx) && !defined (STM32L4S7xx) && !defined (STM32L4S9xx) #define STM32L4X_PAGE_SHIFT 11 #else #define STM32L4X_PAGE_SHIFT 12 #endif /* offset and len must be aligned on 8 for write * , positive and not beyond end of flash */ bool flash_stm32_valid_range(struct device *dev, off_t offset, u32_t len, bool write) { return (!write || (offset % 8 == 0 && len % 8 == 0U)) && flash_stm32_range_exists(dev, offset, len); } /* * STM32L4xx devices can have up to 512 2K pages on two 256x2K pages banks * * STM32L4R/Sxx devices can have up to 512 4K pages on two 256x4K pages banks */ static unsigned int get_page(off_t offset) { return offset >> STM32L4X_PAGE_SHIFT; } static int write_dword(struct device *dev, off_t offset, u64_t val) { volatile u32_t *flash = (u32_t *)(offset + CONFIG_FLASH_BASE_ADDRESS); struct stm32l4x_flash *regs = FLASH_STM32_REGS(dev); #if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK) bool dcache_enabled = false; #endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */ u32_t tmp; int rc; /* if the control register is locked, do not fail silently */ if (regs->cr & FLASH_CR_LOCK) { return -EIO; } /* Check that no Flash main memory operation is ongoing */ rc = flash_stm32_wait_flash_idle(dev); if (rc < 0) { return rc; } /* Check if this double word is erased */ if (flash[0] != 0xFFFFFFFFUL || flash[1] != 0xFFFFFFFFUL) { return -EIO; } #if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK) /* * Disable the data cache to avoid the silicon errata 2.2.3: * "Data cache might be corrupted during Flash memory read-while-write operation" */ if (regs->acr.val & FLASH_ACR_DCEN) { dcache_enabled = true; regs->acr.val &= (~FLASH_ACR_DCEN); } #endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */ /* Set the PG bit */ regs->cr |= FLASH_CR_PG; /* Flush the register write */ tmp = regs->cr; /* Perform the data write operation at the desired memory address */ flash[0] = (u32_t)val; flash[1] = (u32_t)(val >> 32); /* Wait until the BSY bit is cleared */ rc = flash_stm32_wait_flash_idle(dev); /* Clear the PG bit */ regs->cr &= (~FLASH_CR_PG); #if defined(FLASH_OPTR_DUALBANK) || defined(FLASH_OPTR_DBANK) /* Reset/enable the data cache if previously enabled */ if (dcache_enabled) { regs->acr.val |= FLASH_ACR_DCRST; regs->acr.val &= (~FLASH_ACR_DCRST); regs->acr.val |= FLASH_ACR_DCEN; } #endif /* FLASH_OPTR_DUALBANK || FLASH_OPTR_DBANK */ return rc; } static int erase_page(struct device *dev, unsigned int page) { struct stm32l4x_flash *regs = FLASH_STM32_REGS(dev); u32_t tmp; u16_t pages_per_bank; int rc; #if !defined(FLASH_OPTR_DUALBANK) && !defined(FLASH_OPTR_DBANK) /* Single bank device. Each page is of 2KB size */ pages_per_bank = DT_FLASH_SIZE >> 1; #elif defined(FLASH_OPTR_DUALBANK) /* L4 series (2K page size) with configurable Dual Bank (default y) */ /* Dual Bank is only option for 1M devices */ if ((regs->optr & FLASH_OPTR_DUALBANK) || (DT_FLASH_SIZE == 1024)) { /* Dual Bank configuration (nbr pages = flash size / 2 / 2K) */ pages_per_bank = DT_FLASH_SIZE >> 2; } else { /* Single bank configuration. This has not been validated. */ /* Not supported for now. */ return -ENOTSUP; } #elif defined(FLASH_OPTR_DBANK) /* L4+ series (4K page size) with configurable Dual Bank (default y)*/ if (regs->optr & FLASH_OPTR_DBANK) { /* Dual Bank configuration (nbre pags = flash size / 2 / 4K) */ pages_per_bank = DT_FLASH_SIZE >> 3; } else { /* Single bank configuration */ /* Requires 128 bytes data read. This config is not supported */ return -ENOTSUP; } #endif /* if the control register is locked, do not fail silently */ if (regs->cr & FLASH_CR_LOCK) { return -EIO; } /* Check that no Flash memory operation is ongoing */ rc = flash_stm32_wait_flash_idle(dev); if (rc < 0) { return rc; } /* Set the PER bit and select the page you wish to erase */ regs->cr |= FLASH_CR_PER; #ifdef FLASH_CR_BKER regs->cr &= ~FLASH_CR_BKER_Msk; /* Select bank, only for DUALBANK devices */ if (page >= pages_per_bank) regs->cr |= FLASH_CR_BKER; #endif regs->cr &= ~FLASH_CR_PNB_Msk; regs->cr |= ((page % pages_per_bank) << 3); /* Set the STRT bit */ regs->cr |= FLASH_CR_STRT; /* flush the register write */ tmp = regs->cr; /* Wait for the BSY bit */ rc = flash_stm32_wait_flash_idle(dev); regs->cr &= ~FLASH_CR_PER; return rc; } int flash_stm32_block_erase_loop(struct device *dev, unsigned int offset, unsigned int len) { int i, rc = 0; i = get_page(offset); for (; i <= get_page(offset + len - 1) ; ++i) { rc = erase_page(dev, i); if (rc < 0) { break; } } return rc; } int flash_stm32_write_range(struct device *dev, unsigned int offset, const void *data, unsigned int len) { int i, rc = 0; for (i = 0; i < len; i += 8, offset += 8U) { rc = write_dword(dev, offset, UNALIGNED_GET((const u64_t *) data + (i >> 3))); if (rc < 0) { return rc; } } return rc; } void flash_stm32_page_layout(struct device *dev, const struct flash_pages_layout **layout, size_t *layout_size) { static struct flash_pages_layout stm32l4_flash_layout = { .pages_count = 0, .pages_size = 0, }; ARG_UNUSED(dev); if (stm32l4_flash_layout.pages_count == 0) { stm32l4_flash_layout.pages_count = FLASH_SIZE / FLASH_PAGE_SIZE; stm32l4_flash_layout.pages_size = FLASH_PAGE_SIZE; } *layout = &stm32l4_flash_layout; *layout_size = 1; }