166 lines
5.5 KiB
YAML
166 lines
5.5 KiB
YAML
# Copyright (c) 2020, Teslabs Engineering S.L.
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# SPDX-License-Identifier: Apache-2.0
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description: |
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STM32 Flexible Memory Controller (SDRAM controller).
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The FMC SDRAM controller can be used to interface with external SDRAM
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memories. Up to 2 SDRAM banks are supported with independent configuration. It
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is worth to note that while settings are independent, some are shared or are
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required to be set according to the most constraining device. Refer to the
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properties description or the datasheet for more details.
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The FMC SDRAM controller is defined below the FMC node and SDRAM banks are
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defined as child nodes of the FMC SDRAM node. You can either have bank 1 (@0),
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bank 2 (@1) or both. You can enable the FMC SDRAM controller in your board
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DeviceTree file like this:
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&fmc {
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status = "okay";
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pinctrl-0 = <&fmc_nbl0_pe0 &fmc_nbl1_pe1 &fmc_nbl2_pi4...>;
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sdram {
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status = "okay";
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power-up-delay = <100>;
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num-auto-refresh = <8>;
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mode-register = <0x220>;
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refresh-rate = <603>;
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bank@0 {
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reg = <0>;
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st,sdram-control = <STM32_FMC_SDRAM_NC_9
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STM32_FMC_SDRAM_NR_12
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STM32_FMC_SDRAM_MWID_32
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STM32_FMC_SDRAM_NB_4
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STM32_FMC_SDRAM_CAS_2
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STM32_FMC_SDRAM_SDCLK_PERIOD_2
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STM32_FMC_SDRAM_RBURST_ENABLE
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STM32_FMC_SDRAM_RPIPE_0>;
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st,sdram-timing = <2 6 4 6 2 2 2>;
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};
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bank@1 {
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reg = <1>;
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...
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};
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};
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};
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Note that you will find definitions for the st,sdram-control field at
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dt-bindings/memory-controller/stm32-fmc-sdram.h. This file is already included
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in the SoC DeviceTree files.
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Finally, in order to make the memory available you will need to define new
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memory device/s in DeviceTree:
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sdram1: sdram@c0000000 {
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device_type = "memory";
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reg = <0xc000000 DT_SIZE_M(X)>;
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};
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sdram2: sdram@d0000000 {
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device_type = "memory";
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reg = <0xd000000 DT_SIZE_M(X)>;
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};
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It is important to use sdram1 and sdram2 node labels for bank 1 and bank 2
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respectively. Memory addresses are 0xc0000000 and 0xd0000000 for bank 1 and
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bank 2 respectively.
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compatible: "st,stm32-fmc-sdram"
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include: base.yaml
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properties:
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label:
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required: true
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"#address-cells":
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required: true
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const: 1
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"#size-cells":
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required: true
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const: 0
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power-up-delay:
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type: int
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default: 100
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description: Power-up delay in microseconds.
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num-auto-refresh:
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type: int
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default: 8
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description: Number of auto-refresh commands issued.
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mode-register:
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type: int
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required: true
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description:
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A 14-bit field that defines the SDRAM Mode Register content. The mode
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register bits are also used to program the extended mode register for
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mobile SDRAM.
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refresh-rate:
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type: int
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required: true
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description:
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A 13-bit field defines the refresh rate of the SDRAM device. It is
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expressed in number of memory clock cycles. It must be set at least to
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41 SDRAM clock cycles.
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child-binding:
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description: SDRAM bank.
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properties:
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reg:
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type: int
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required: true
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st,sdram-control:
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type: array
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required: true
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description: |
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SDRAM control configuration. Expected fields, in order, are,
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- NC: Number of bits of a column address.
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- NR: Number of bits of a row address.
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- MWID: Memory device width.
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- NB: Number of internal banks.
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- CAS: SDRAM CAS latency in number of memory clock cycles.
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- SDCLK: SDRAM clock period. If two SDRAM devices are used both should
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have the same value.
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- RBURST: Enable burst read mode. If two SDRAM devices are used both
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should have the same value.
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- RPIPE: Delay, in fmc_ker_ck clock cycles, for reading data after CAS
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latency. If two SDRAM devices are used both should have the same
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value.
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st,sdram-timing:
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type: array
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required: true
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description: |
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SDRAM timing configuration. Expected fields, in order, are,
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- TMRD: Delay between a Load Mode Register command and an Active or
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Refresh command in number of memory clock cycles.
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- TXSR: Delay from releasing the Self-refresh command to issuing the
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Activate command in number of memory clock cycles. If two SDRAM
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devices are used, the FMC_SDTR1 and FMC_SDTR2 must be programmed with
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the same TXSR timing corresponding to the slowest SDRAM device
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- TRAS: Minimum Self-refresh period in number of memory clock cycles.
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- TRC: Delay between the Refresh command and the Activate command, as
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well as the delay between two consecutive Refresh commands. It is
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expressed in number of memory clock cycles. If two SDRAM devices are
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used, the TRC must be programmed with the timings of the slowest
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device in both banks.
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- TWP: Delay between a Write and a Precharge command in number of memory
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clock cycles
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- TRP: Delay between a Precharge command and another command in number
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of memory clock cycles. If two SDRAM devices are used, the TRP must be
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programmed with the timing of the slowest device in both banks.
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- TRCD: Delay between the Activate command and a Read/Write command in
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number of memory clock cycles.
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