243 lines
5.2 KiB
C
243 lines
5.2 KiB
C
/*
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* Copyright (c) 2017 BayLibre, SAS
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* Copyright (c) 2019 Linaro Limited
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* Copyright (c) 2020 Andreas Sandberg
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*
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* SPDX-License-Identifier: Apache-2.0
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*/
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#include <zephyr/logging/log.h>
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LOG_MODULE_REGISTER(flash_stm32generic, CONFIG_FLASH_LOG_LEVEL);
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#include <zephyr/kernel.h>
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#include <zephyr/device.h>
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#include <string.h>
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#include <zephyr/drivers/flash.h>
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#include <zephyr/init.h>
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#include <zephyr/sys/barrier.h>
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#include <soc.h>
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#include "flash_stm32.h"
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#if FLASH_STM32_WRITE_BLOCK_SIZE == 8
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typedef uint64_t flash_prg_t;
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#elif FLASH_STM32_WRITE_BLOCK_SIZE == 4
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typedef uint32_t flash_prg_t;
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#elif FLASH_STM32_WRITE_BLOCK_SIZE == 2
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typedef uint16_t flash_prg_t;
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#else
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#error Unknown write block size
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#endif
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#if defined(FLASH_CR_PER)
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#define FLASH_ERASED_VALUE ((flash_prg_t)-1)
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#elif defined(FLASH_PECR_ERASE)
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#define FLASH_ERASED_VALUE 0
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#else
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#error Unknown erase value
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#endif
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static unsigned int get_page(off_t offset)
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{
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return offset / FLASH_PAGE_SIZE;
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}
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#if defined(FLASH_CR_PER)
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static int is_flash_locked(FLASH_TypeDef *regs)
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{
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return !!(regs->CR & FLASH_CR_LOCK);
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}
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static void write_enable(FLASH_TypeDef *regs)
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{
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regs->CR |= FLASH_CR_PG;
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}
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static void write_disable(FLASH_TypeDef *regs)
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{
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regs->CR &= (~FLASH_CR_PG);
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}
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static void erase_page_begin(FLASH_TypeDef *regs, unsigned int page)
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{
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/* Set the PER bit and select the page you wish to erase */
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regs->CR |= FLASH_CR_PER;
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regs->AR = CONFIG_FLASH_BASE_ADDRESS + page * FLASH_PAGE_SIZE;
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barrier_dsync_fence_full();
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/* Set the STRT bit */
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regs->CR |= FLASH_CR_STRT;
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}
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static void erase_page_end(FLASH_TypeDef *regs)
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{
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regs->CR &= ~FLASH_CR_PER;
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}
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#else
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static int is_flash_locked(FLASH_TypeDef *regs)
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{
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return !!(regs->PECR & FLASH_PECR_PRGLOCK);
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}
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static void write_enable(FLASH_TypeDef *regs)
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{
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/* Only used for half-page programming on L1x */
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#if !defined(CONFIG_SOC_SERIES_STM32L1X)
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regs->PECR |= FLASH_PECR_PROG;
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#endif
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}
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static void write_disable(FLASH_TypeDef *regs)
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{
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/* Clear the PG bit */
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regs->PECR &= ~FLASH_PECR_PROG;
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}
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static void erase_page_begin(FLASH_TypeDef *regs, unsigned int page)
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{
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volatile flash_prg_t *page_base = (flash_prg_t *)(
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CONFIG_FLASH_BASE_ADDRESS + page * FLASH_PAGE_SIZE);
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/* Enable programming in erase mode. An erase is triggered by
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* writing 0 to the first word of a page.
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*/
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regs->PECR |= FLASH_PECR_ERASE;
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regs->PECR |= FLASH_PECR_PROG;
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barrier_dsync_fence_full();
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*page_base = 0;
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}
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static void erase_page_end(FLASH_TypeDef *regs)
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{
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/* Disable programming */
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regs->PECR &= ~FLASH_PECR_PROG;
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regs->PECR &= ~FLASH_PECR_ERASE;
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}
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#endif
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static int write_value(const struct device *dev, off_t offset,
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flash_prg_t val)
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{
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volatile flash_prg_t *flash = (flash_prg_t *)(
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offset + CONFIG_FLASH_BASE_ADDRESS);
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FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
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int rc;
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/* if the control register is locked, do not fail silently */
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if (is_flash_locked(regs)) {
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LOG_ERR("Flash is locked");
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return -EIO;
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}
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/* Check that no Flash main memory operation is ongoing */
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rc = flash_stm32_wait_flash_idle(dev);
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if (rc < 0) {
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return rc;
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}
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/* Check if this half word is erased */
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if (*flash != FLASH_ERASED_VALUE) {
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LOG_ERR("Flash location not erased");
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return -EIO;
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}
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/* Enable writing */
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write_enable(regs);
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/* Make sure the register write has taken effect */
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barrier_dsync_fence_full();
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/* Perform the data write operation at the desired memory address */
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*flash = val;
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/* Wait until the BSY bit is cleared */
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rc = flash_stm32_wait_flash_idle(dev);
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/* Disable writing */
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write_disable(regs);
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return rc;
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}
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int flash_stm32_block_erase_loop(const struct device *dev,
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unsigned int offset,
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unsigned int len)
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{
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FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
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int i, rc = 0;
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/* if the control register is locked, do not fail silently */
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if (is_flash_locked(regs)) {
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LOG_ERR("Flash is locked");
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return -EIO;
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}
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/* Check that no Flash memory operation is ongoing */
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rc = flash_stm32_wait_flash_idle(dev);
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if (rc < 0) {
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return rc;
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}
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for (i = get_page(offset); i <= get_page(offset + len - 1); ++i) {
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erase_page_begin(regs, i);
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barrier_dsync_fence_full();
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rc = flash_stm32_wait_flash_idle(dev);
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erase_page_end(regs);
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if (rc < 0) {
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break;
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}
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}
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return rc;
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}
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int flash_stm32_write_range(const struct device *dev, unsigned int offset,
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const void *data, unsigned int len)
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{
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int i, rc = 0;
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flash_prg_t value;
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for (i = 0; i < len / sizeof(flash_prg_t); i++) {
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memcpy(&value,
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(const uint8_t *)data + i * sizeof(flash_prg_t),
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sizeof(flash_prg_t));
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rc = write_value(dev, offset + i * sizeof(flash_prg_t), value);
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if (rc < 0) {
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return rc;
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}
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}
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return rc;
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}
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void flash_stm32_page_layout(const struct device *dev,
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const struct flash_pages_layout **layout,
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size_t *layout_size)
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{
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static struct flash_pages_layout flash_layout = {
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.pages_count = 0,
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.pages_size = 0,
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};
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ARG_UNUSED(dev);
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if (flash_layout.pages_count == 0) {
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#if defined(CONFIG_SOC_SERIES_STM32F3X)
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flash_layout.pages_count =
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DT_REG_SIZE(DT_INST(0, soc_nv_flash)) / FLASH_PAGE_SIZE;
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#else
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flash_layout.pages_count = (CONFIG_FLASH_SIZE * 1024) /
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FLASH_PAGE_SIZE;
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#endif
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flash_layout.pages_size = FLASH_PAGE_SIZE;
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}
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*layout = &flash_layout;
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*layout_size = 1;
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}
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