# Copyright (c) 2020, Teslabs Engineering S.L. # SPDX-License-Identifier: Apache-2.0 description: | STM32 Flexible Memory Controller (SDRAM controller). The FMC SDRAM controller can be used to interface with external SDRAM memories. Up to 2 SDRAM banks are supported with independent configuration. It is worth to note that while settings are independent, some are shared or are required to be set according to the most constraining device. Refer to the properties description or the datasheet for more details. The FMC SDRAM controller is defined below the FMC node and SDRAM banks are defined as child nodes of the FMC SDRAM node. You can either have bank 1 (@0), bank 2 (@1) or both. You can enable the FMC SDRAM controller in your board DeviceTree file like this: &fmc { status = "okay"; pinctrl-0 = <&fmc_nbl0_pe0 &fmc_nbl1_pe1 &fmc_nbl2_pi4...>; sdram { status = "okay"; power-up-delay = <100>; num-auto-refresh = <8>; mode-register = <0x220>; refresh-rate = <603>; bank@0 { reg = <0>; st,sdram-control = ; st,sdram-timing = <2 6 4 6 2 2 2>; }; bank@1 { reg = <1>; ... }; }; }; Note that you will find definitions for the st,sdram-control field at dt-bindings/memory-controller/stm32-fmc-sdram.h. This file is already included in the SoC DeviceTree files. Finally, in order to make the memory available you will need to define new memory device/s in DeviceTree: sdram1: sdram@c0000000 { compatible = "zephyr,memory-region", "mmio-sram"; device_type = "memory"; reg = <0xc000000 DT_SIZE_M(X)>; zephyr,memory-region = "SDRAM1"; }; sdram2: sdram@d0000000 { compatible = "zephyr,memory-region", "mmio-sram"; device_type = "memory"; reg = <0xd000000 DT_SIZE_M(X)>; zephyr,memory-region = "SDRAM2"; }; It is important to use sdram1 and sdram2 node labels for bank 1 and bank 2 respectively. Memory addresses are 0xc0000000 and 0xd0000000 for bank 1 and bank 2 respectively. compatible: "st,stm32-fmc-sdram" include: base.yaml properties: "#address-cells": required: true const: 1 "#size-cells": required: true const: 0 power-up-delay: type: int default: 100 description: Power-up delay in microseconds. num-auto-refresh: type: int default: 8 description: Number of auto-refresh commands issued. mode-register: type: int required: true description: A 14-bit field that defines the SDRAM Mode Register content. The mode register bits are also used to program the extended mode register for mobile SDRAM. refresh-rate: type: int required: true description: A 13-bit field defines the refresh rate of the SDRAM device. It is expressed in number of memory clock cycles. It must be set at least to 41 SDRAM clock cycles. child-binding: description: SDRAM bank. properties: reg: type: int required: true st,sdram-control: type: array required: true description: | SDRAM control configuration. Expected fields, in order, are, - NC: Number of bits of a column address. - NR: Number of bits of a row address. - MWID: Memory device width. - NB: Number of internal banks. - CAS: SDRAM CAS latency in number of memory clock cycles. - SDCLK: SDRAM clock period. If two SDRAM devices are used both should have the same value. - RBURST: Enable burst read mode. If two SDRAM devices are used both should have the same value. - RPIPE: Delay, in fmc_ker_ck clock cycles, for reading data after CAS latency. If two SDRAM devices are used both should have the same value. st,sdram-timing: type: array required: true description: | SDRAM timing configuration. Expected fields, in order, are, - TMRD: Delay between a Load Mode Register command and an Active or Refresh command in number of memory clock cycles. - TXSR: Delay from releasing the Self-refresh command to issuing the Activate command in number of memory clock cycles. If two SDRAM devices are used, the FMC_SDTR1 and FMC_SDTR2 must be programmed with the same TXSR timing corresponding to the slowest SDRAM device - TRAS: Minimum Self-refresh period in number of memory clock cycles. - TRC: Delay between the Refresh command and the Activate command, as well as the delay between two consecutive Refresh commands. It is expressed in number of memory clock cycles. If two SDRAM devices are used, the TRC must be programmed with the timings of the slowest device in both banks. - TWP: Delay between a Write and a Precharge command in number of memory clock cycles - TRP: Delay between a Precharge command and another command in number of memory clock cycles. If two SDRAM devices are used, the TRP must be programmed with the timing of the slowest device in both banks. - TRCD: Delay between the Activate command and a Read/Write command in number of memory clock cycles.