/* * Copyright (c) 2019 Philippe Retornaz * Copyright (c) 2017 Linaro Limited * Copyright (c) 2017 BayLibre, SAS * * SPDX-License-Identifier: Apache-2.0 */ #define LOG_DOMAIN flash_stm32g0 #define LOG_LEVEL CONFIG_FLASH_LOG_LEVEL #include LOG_MODULE_REGISTER(LOG_DOMAIN); #include #include #include #include #include #include #include "flash_stm32.h" /* FLASH_DBANK_SUPPORT is defined in the HAL for all G0Bx and G0C1 SoCs, * while only those with 256KiB and 512KiB Flash have two banks. */ #if defined(FLASH_DBANK_SUPPORT) && (CONFIG_FLASH_SIZE > (128)) #define STM32G0_DBANK_SUPPORT #endif #if defined(STM32G0_DBANK_SUPPORT) #define STM32G0_BANK_COUNT 2 #define STM32G0_BANK2_START_PAGE_NR 256 #else #define STM32G0_BANK_COUNT 1 #endif #define STM32G0_FLASH_SIZE (FLASH_SIZE) #define STM32G0_FLASH_PAGE_SIZE (FLASH_PAGE_SIZE) #define STM32G0_PAGES_PER_BANK \ ((STM32G0_FLASH_SIZE / STM32G0_FLASH_PAGE_SIZE) / STM32G0_BANK_COUNT) static inline void flush_cache(FLASH_TypeDef *regs) { if (regs->ACR & FLASH_ACR_ICEN) { regs->ACR &= ~FLASH_ACR_ICEN; /* Datasheet: ICRST: Instruction cache reset : * This bit can be written only when the instruction cache * is disabled */ regs->ACR |= FLASH_ACR_ICRST; regs->ACR &= ~FLASH_ACR_ICRST; regs->ACR |= FLASH_ACR_ICEN; } } static int write_dword(const struct device *dev, off_t offset, uint64_t val) { volatile uint32_t *flash = (uint32_t *)(offset + FLASH_STM32_BASE_ADDRESS); FLASH_TypeDef *regs = FLASH_STM32_REGS(dev); uint32_t tmp; int rc; /* if the control register is locked, do not fail silently */ if (regs->CR & FLASH_CR_LOCK) { return -EIO; } /* Check that no Flash main memory operation is ongoing */ rc = flash_stm32_wait_flash_idle(dev); if (rc < 0) { return rc; } /* Check if this double word is erased and value isn't 0. * * It is allowed to write only zeros over an already written dword * See 3.3.8 in reference manual. */ if ((flash[0] != 0xFFFFFFFFUL || flash[1] != 0xFFFFFFFFUL) && val != 0UL) { LOG_ERR("Word at offs %ld not erased", (long)offset); return -EIO; } /* Set the PG bit */ regs->CR |= FLASH_CR_PG; /* Flush the register write */ tmp = regs->CR; /* Perform the data write operation at the desired memory address */ flash[0] = (uint32_t)val; flash[1] = (uint32_t)(val >> 32); /* Wait until the BSY bit is cleared */ rc = flash_stm32_wait_flash_idle(dev); /* Clear the PG bit */ regs->CR &= (~FLASH_CR_PG); return rc; } static int erase_page(const struct device *dev, unsigned int offset) { FLASH_TypeDef *regs = FLASH_STM32_REGS(dev); uint32_t tmp; int rc; int page; /* if the control register is locked, do not fail silently */ if (regs->CR & FLASH_CR_LOCK) { return -EIO; } /* Check that no Flash memory operation is ongoing */ rc = flash_stm32_wait_flash_idle(dev); if (rc < 0) { return rc; } /* * If an erase operation in Flash memory also concerns data * in the instruction cache, the user has to ensure that these data * are rewritten before they are accessed during code execution. */ flush_cache(regs); tmp = regs->CR; page = offset / STM32G0_FLASH_PAGE_SIZE; #if defined(STM32G0_DBANK_SUPPORT) bool swap_enabled = (regs->OPTR & FLASH_OPTR_nSWAP_BANK) == 0; /* big page-nr w/o swap or small page-nr w/ swap indicate bank2 */ if ((page >= STM32G0_PAGES_PER_BANK) != swap_enabled) { page = (page % STM32G0_PAGES_PER_BANK) + STM32G0_BANK2_START_PAGE_NR; tmp |= FLASH_CR_BKER; LOG_DBG("Erase page %d on bank 2", page); } else { page = page % STM32G0_PAGES_PER_BANK; tmp &= ~FLASH_CR_BKER; LOG_DBG("Erase page %d on bank 1", page); } #endif /* Set the PER bit and select the page you wish to erase */ tmp |= FLASH_CR_PER; tmp &= ~FLASH_CR_PNB_Msk; tmp |= ((page << FLASH_CR_PNB_Pos) & FLASH_CR_PNB_Msk); /* Set the STRT bit and write the reg */ tmp |= FLASH_CR_STRT; regs->CR = tmp; /* Wait for the BSY bit */ rc = flash_stm32_wait_flash_idle(dev); regs->CR &= ~FLASH_CR_PER; return rc; } int flash_stm32_block_erase_loop(const struct device *dev, unsigned int offset, unsigned int len) { unsigned int addr = offset; int rc = 0; for (; addr <= offset + len - 1 ; addr += STM32G0_FLASH_PAGE_SIZE) { rc = erase_page(dev, addr); if (rc < 0) { break; } } return rc; } int flash_stm32_write_range(const struct device *dev, unsigned int offset, const void *data, unsigned int len) { int i, rc = 0; for (i = 0; i < len; i += 8, offset += 8) { rc = write_dword(dev, offset, UNALIGNED_GET((const uint64_t *) data + (i >> 3))); if (rc < 0) { return rc; } } return rc; } /* * The address space is always continuous, even though a subset of G0 SoCs has * two flash banks. * Only the "physical" flash page-NRs are not continuous on those SoCs. * As a result the page numbers used in the zephyr flash api differs * from the "physical" flash page number. * The first is equal to the address offset divided by the page size, while * "physical" pages are numbered starting with 0 on bank1 and 256 on bank2. * As a result only a single homogeneous flash page layout needs to be defined. */ void flash_stm32_page_layout(const struct device *dev, const struct flash_pages_layout **layout, size_t *layout_size) { static struct flash_pages_layout stm32g0_flash_layout = { .pages_count = 0, .pages_size = 0, }; ARG_UNUSED(dev); if (stm32g0_flash_layout.pages_count == 0) { stm32g0_flash_layout.pages_count = STM32G0_FLASH_SIZE / STM32G0_FLASH_PAGE_SIZE; stm32g0_flash_layout.pages_size = STM32G0_FLASH_PAGE_SIZE; } *layout = &stm32g0_flash_layout; *layout_size = 1; } /* Override weak function */ int flash_stm32_check_configuration(void) { #if defined(STM32G0_DBANK_SUPPORT) && (CONFIG_FLASH_SIZE == 256) /* Single bank mode not supported on dual bank SoCs with 256kiB flash */ if ((FLASH->OPTR & FLASH_OPTR_DUAL_BANK) == 0) { LOG_ERR("Single bank configuration not supported by the driver"); return -ENOTSUP; } #endif return 0; }